(PDF) P2610ATG Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P2610ATG
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2610ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation TC = 25 °C TC = 100 °C L = 0.3mH TC = 25 °C TC = 100 °C VGS ID IDM IAS EAS PD ±20 50 31 200 77 900 128 51 Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RθJC RθJA RθCS TYPICAL 0.5 MAXIMUM UNITS 0.97 62.5 °C / W Ver 1.0 1 2011/4/8 1 page

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PDF P2610ATG Data sheet ( Hoja de datos )