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PDF YMP7N60 Data sheet ( Hoja de datos )
| Número de pieza | YMP7N60 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | YM | |
| Logotipo |  |
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YMP7N60
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP1404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
600
1
1.2
7
V
Ω
Ω
A
Features
● VDS=600V；ID= 7 A@ VGS =10V；
RDS(ON)< 1.2 Ω @ VGS =10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
GD S
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-220F top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP7N60
YMP7N60
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
YMP7N60
YMP7N60
600
7.0 7.0 *
4.4 4.4 *
28 28 *
± 30
420
7.0
14.7
5.5
147
48
1.18
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
1/7
1 page  
Gate Charge Test Circuit & Waveform
YMP7N60
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet YMP7N60.PDF ] | |
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