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PDF P0920ATF Data sheet ( Hoja de datos )
| Número de pieza | P0920ATF | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
P0920ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 2.1 mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
200
±20
9
5
22
9
85
28
11
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
4.4
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
2 2.6
4
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 4.5A
VDS = 10V, ID = 4.5A
0.3 0.42 Ω
19 S
REV 1.0
1
D-51-1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P0920ATF.PDF ] | |
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