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PDF SDB85N03L Data sheet ( Hoja de datos )
| Número de pieza | SDB85N03L | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop | |
| Logotipo |  |
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S amHop Microelectronics C orp.
S DP /B 85N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID R DS (on) ( m W ) Max
5 @ VGS = 10V
83A
7.5 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
VDS
VGS
Limit
30
20
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
ID
IDM
83
249
Drain-S ource Diode Forward C urrent
IS
75
Maximum P ower Dissipation @ Tc=25 C
PD
Operating and S torage Temperature R ange TJ, TS TG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
75
-65 to 175
2
62.5
1
Unit
V
V
A
A
A
W
C
C /W
C /W
1 page  
S DP /B 85N03L
4
V DD
V IN R L
D VOUT
VG S
RGEN G
td(on)
VOUT
ton
tr
td(off)
90%
10% INVE R TE D
toff
tf
90%
10%
90%
S
VIN 50%
50%
10%
PULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.01
0.1
1 10 100
S quare Wave P uls e Duration (ms ec)
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t)
4. Duty C ycle, D=t1/t2
1000
10000
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SDB85N03L.PDF ] | |
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