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PDF R8002CND Data sheet ( Hoja de datos )
| Número de pieza | R8002CND | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R8002CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
800V
4.3Ω
±2A
69W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free plating ; RoHS compliant
lOutline
TO-252
SC-63
CPT3
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
R8002CND
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
800 V
Continuous drain current (Tc = 25°C)
ID*1 ±2 A
Pulsed drain current
IDP*2 ±6 A
Gate - Source voltage
VGSS
±2 V
Avalanche current, single pulse
IAS*3 1 A
Avalanche energy, single pulse
EAS*3
0.265
mJ
Power dissipation (Tc = 25°C)
PD 69 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160909 - Rev.002
1 page  
R8002CND
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Avalanche Energy Derating Curve
vs. Junction Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160909 - Rev.002
5 Page 
R8002CND
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160909 - Rev.002
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R8002CND.PDF ] | |
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