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PDF R6010MND3 Data sheet ( Hoja de datos )
| Número de pieza | R6010MND3 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±10 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.5 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation (Tc = 25°C)
PD 143 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.003
1 page  
R6010MND3
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Drain Current Derating
Curve vs. Ambient Temperature
Fig.4 Avalanche Energy Derating
Curve vs. Junction Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160725 - Rev.003
5 Page 
R6010MND3
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160725 - Rev.003
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R6010MND3.PDF ] | |
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