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PDF QH8MA3 Data sheet ( Hoja de datos )
| Número de pieza | QH8MA3 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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QH8MA3
30V Nch+Pch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
29mΩ 48mΩ
±7.0A ±5.5A
2.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
MA3
lAbsolute maximum ratings (Ta = 25°C) ,unless otherwise specified.
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
VDSS
30 -30
V
Continuous drain current
ID*1
±7.0 ±5.5
A
Pulsed drain current
ID,
*2
pulse
±18 ±18
A
Gate - Source voltage
VGSS
±20 ±20
V
Avalanche energy, single pulse
EAS*4
1.8 1.1
mJ
Avalanche current
IAS*4
5.0 -4.0
A
Power dissipation
total PD*1 2.5
PD*3 1.5 W
element
PD*3
1.25
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/19
20150730 - Rev.002
1 page  
QH8MA3
lElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/19
20150730 - Rev.002
5 Page 
QH8MA3
lElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/19
20150730 - Rev.002
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet QH8MA3.PDF ] | |
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