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PDF 2N7000K Data sheet ( Hoja de datos )
| Número de pieza | 2N7000K | |
| Descripción | N Channel MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N7000K (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed (Note 1)
ID
IDP
Drain Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING
60
20
500
2000
625
150
-55 150
UNIT
V
V
mA
mW
2N7000K
N Channel MOSFET
ESD Protected 2000V
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00+_ 0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. SOURCE
2. GATE
3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
IGSSF
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
10
-10
UNIT
V
A
A
A
2009. 11. 17
Revision No : 1
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N7000K.PDF ] | |
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