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Número de pieza | 2N7000K | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | KODENSHI KOREA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7000K (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V
High power and current handling capability
Very fast switching
Halogen free and RoHS compliant device
Applications
High speed line driver
SGD
TO-92
Ordering Information
Part Number
Marking Code
Package
Packaging
2N7000K
2N7000K
TO-92
Tape
Marking Information
2N
7000K
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code(year,week)
Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Drain-Source voltage
Gate-Source voltage
Maximum drain current (Note 1)
Pulsed drain current (Note 1)
Power dissipation (Note 2)
Operating junction temperature
Storage temperature range
Thermal resistance junction to ambient (Note 2)
VDS
VGS
ID
IDP
PD
Tj
Tstg
Rth(j-a)
Note 1) Limited only maximum junction temperature
Note 2) Device mounted on FR-4 board with recommended pad layout.
Rev. date: 28-MAR-12
KSD-T0A074-000
Ratings
60
20
500
2
625
150
-55 ~ 150
400
Unit
V
V
mA
A
mW
C
C
C/W
www.auk.co.kr
1 of 6
1 page Package Outline Dimensions
2N7000K
Rev. date: 28-MAR-12
KSD-T0A074-000
www.auk.co.kr
5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2N7000K.PDF ] |
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