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PDF TC54256AP Data sheet ( Hoja de datos )

Número de pieza TC54256AP
Descripción COMS ONE TIME PROGRAMMABLE READ ONLY MEMORY
Fabricantes Toshiba 
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No Preview Available ! TC54256AP Hoja de datos, Descripción, Manual

TOSHIBA MOS MEMORY PRODUCT
TC54256AP/AF
32.768 WORD x 8 BIT COMS ONE TIME
PROGRAMMABLE READ ONLY MEMORY
IDESCRIPTION/
The TC54256AP/AF is a 32,768 word x 8 bit one time programmable read only -memory,
and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 200ns and
has low power standby mode which reduces the power dissipation without increasing
access time. The electrical characteristics and programming method are the same as
U.V. EPROM TC57256AD's. Once programed, the TC54256AP/AF can not be erased because
of using plastic DIP without transparent window.
IFEATURES/
• Peripheral circuit: CMOS
Memory cell
: N-MOS
• Low power dissipation
Active: 40mA/6.7MHz
Standby: 100).lA
• Fast access time: 200ns
• Single 5V power supply
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
• Pin compatible with ROM TC53257P, TMM23256P,
EPROM TMM27256D/AD, TC57256D/AD, One time PROM
TMM24256P/AP and TC54256P
• Standard 28 pin DIP plastic package: TC54256AP
• Plastic Flat Package
TC54256AF
IBLOCK DIAGRAMI
IPIN CONNECTIONI (TOP VIEH)
Vpp GND vee 00 01 02 03 04 05 06 07
Vpp 1
A12
A7
A6
A5
A4
A3
A2
Al
AO
00
01
02
GND
Vee
A14
A13
A8
A9
All
ern
A10
eE
07
06
as
04
03
AO
Al
A2
A3
A4
A5
A6
A7
A8
A9
A10
All
A12
A13
A14U""""... -----·
32,768 x 8 Oi ts
IPIN NM1ESI
IMODE SELECTIONI
AO '" A14 Address Inputs
00", 07 Outputs (Inputs)
CE Chip Enable Input
OE Output Enable Input
VPP
Program Supply
Voltage
~MODE
CE
(20)
OE
(22)
Vpp
(1)
VCC
(28)
00'" 07
(11'" 13,15'" 19)
POWER
Read
L
Output Deselect *
L
Data Out
Active
H 5V 5V High Impedance
Standby
H*
High Impedance Standby
Program
LH
Data In
VCC
VCC Supply Voltage
(+5V)
Program Inhibit H
Program Verify *
GND Ground
*: H or L
H 12.5V 6V High Impedance Active
L Data Out
- E-37 -

1 page




TC54256AP pdf
TC54256AP/AF
TIf.lING WAVEFORMS (PROGRAM)
(Vee=6V±O.25V, Vpp=12.5V±O.5V)
AO-H
00-07
x
-~~VtoPW
tCEH
~
\
too
~ DIN STABLE
tDH
1\
If
K=
l.tAH
I ·XXY'Y~
tDFP
tOE
)
\ DOUT VALID
I\c
1/
VPP tvps
I
J
Vee tves
I
PROGRAM
PROGRAM VERIFY
Note 1. Vee must be applied simultaneously or before Vpp and cut off
simultaneously or after Vpp.
2. Removing the device from socket and setting the device in socket
with Vpp=l2.5V may cause permanent damage to the device.
3. The Vpp supply voltage is permitted up to l4V for program operation.
So the voltage over l4V should not be applied to the Vpp terminal.
When the switching pulse voltage is applied to the Vpp terminal, the
overshoot voltage of its pulse should not be exceeded l4V.
- E-41-

5 Page





TC54256AP arduino
TC54256AP/AF
OUTLINE DRAWINGS (TC54256AF)
28
15
><"
~
q
01
Unit in mm
Note:
Lead pitch is 1.27 and tolerance is ±O.12 against theoretical
center of each lead that is obtained on the basis of No.1 and
No.28 leads.
- E-47 -

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