DataSheet.es    


PDF RFD10P03L Data sheet ( Hoja de datos )

Número de pieza RFD10P03L
Descripción P-Channel Power MOSFET
Fabricantes Harris 
Logotipo Harris Logotipo



Hay una vista previa y un enlace de descarga de RFD10P03L (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! RFD10P03L Hoja de datos, Descripción, Manual

SEMICONDUCTOR
May 1997
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200, Logic Level
P-Channel Power MOSFET
Features
Description
• 10A, 30V
• rDS(ON) = 0.200
Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Ordering Information
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
PART NUMBER
PACKAGE
BRAND
D
RFD10P03L
RFD10P03LSM
TO-251AA
TO-252AA
10P03L
10P03L
G
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Formerly developmental type TA49205.
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
1
File Number 3515.1

1 page




RFD10P03L pdf
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves Unless Otherwise Specified (Continued)
1.2
VGS = VDS, ID = -250µA
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
150
VDD = -15V, ID = -10A, RL= 1.50
125
100
75
50
25
tr
td(OFF)
tf
td(ON)
0
0 10 20 30 40
RGS, GATE TO SOURCE RESISTANCE ()
50
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
-30
-22.5
VDD =BVDSS
VDD = BVDSS
-5.00
-3.75
RL = 3.0
-15 IG(REF) = -0.25mA -2.50
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
-7.5
0.25 BVDSS 0.25 BVDSS
-1.25
0
IG(REF)
20
IG(ACT)
VGS = -5V
t, TIME ( µs)
IG(REF)
80
IG(ACT)
0.00
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
1200
1000
800
VGS = 0V, f = 1MHz
CISS
600
400
200
0
0
COSS
CRSS
-5 -10 -15 -20
VDS, DRAIN TO SOURCE VOLTAGE (V)
-25
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5

5 Page





RFD10P03L arduino
RFD10P03L, RFD10P03LSM, RFP10P03L
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
E
H1 b2
D
1
b
3
e
e1
TERM. 4
L2
b1
A
A1
SEATING
PLANE
L
0.265
(6.7)
L1
c
J1
L3
b3
0.265 (6.7)
0.070 (1.8)
BACK VIEW
0.118 (3.0)
0.063 (1.6)
0.063 (1.6)
0.090 (2.3)
0.090 (2.3)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
LEAD NO. 1
LEAD NO. 3
TERM. 4
- GATE
- SOURCE
- DRAIN
INCHES
MILLIMETERS
SYMBOL MIN MAX MIN MAX NOTES
A
0.086
0.094
2.19
2.38
-
A1
0.018
0.022
0.46
0.55
4, 5
b
0.028
0.032
0.72
0.81
4, 5
b1
0.033
0.040
0.84
1.01
4
b2
0.205
0.215
5.21
5.46
4, 5
b3 0.190 - 4.83 - 2
c
0.018
0.022
0.46
0.55
4, 5
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e 0.090 TYP
2.28 TYP
7
e1 0.180 BSC
4.57 BSC
H1
0.035
0.045
0.89
1.14
J1
0.040
0.045
1.02
1.14
L
0.100
0.115
2.54
2.92
7
-
-
-
L1 0.020 - 0.51
- 4, 6
L2
0.025
0.040
0.64
1.01
3
L3 0.170 - 4.32 - 2
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L3 and b3 dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.090 inches (2.28mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 6 dated 10-96.
11

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet RFD10P03L.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RFD10P03LP-Channel Power MOSFETHarris
Harris
RFD10P03L10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFETIntersil Corporation
Intersil Corporation
RFD10P03LSMP-Channel Power MOSFETHarris
Harris
RFD10P03LSM10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFETIntersil Corporation
Intersil Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar