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PDF THM81000S-10 Data sheet ( Hoja de datos )

Número de pieza THM81000S-10
Descripción DRAM
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! THM81000S-10 Hoja de datos, Descripción, Manual

TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT
DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 bits dynamic RAM module which assembled
8 pcs of TC5ll000J on the printed circuit board.
The THM8l000S/L is optimized for application to the systems which are required
high density and large capacity such as main memory of the computers and an image
memory systems, and to the others which are requested compact size.
IFEATURESI
• 1,048,576 words by 8 bits organization
• Fast access time
tRAC
tAA
tCAC
tRC
tpc
RAS Access Time
Column Address Access Time
CAS Access Time
Cycle Time
Fast Page Mode Cycle Time
TIDI8l000S/L-lO
lOOns
50ns
35ns
190ns
55ns
THM8l000S/L-12
l20ns
60ns
45ns
220ns
70ns
• Single power supply of 5V+lO%
• Low power
2,640mW MAX. Operating (TID18l000S/L-10)
2,200mW MAX. Operating (TID18l000S/L-12)
44mW MAX. Standby
CAS before RAS refresh, RAS only refresh, Hidden refresh, and Fast P~ge ~lode
capability.
• All inputs and outputs TTL compatible
• 512 refresh cycles/8ms
IPIN CONNECTION I
(TOP VIEW)
...--/0
~~~ glVCC
CAS
DQO
I
AO 0
!I ~CJglAl
£~1
A3
vss
00,2 10
A4 11
I
~IA5
DQ3
A6
A7
12
13
14
15
I
~IDQ,4
AS
A9
16
17
18
N.C. 19
I
~CJJ2Q5
W
~~
vss (22
g C ]DQ,6
N.C.
00,7
23
24
25
~~
26
27 a
glN.C.
N.C.
VCC
28
29
30
I
0
IPIN NAr.-1ESI
AO '" 9
DQO "'7
Address Inputs
Data Input/Outputs
CAS Column Address Strobe
RAS Row Address Strobe
H Read/Write Input
VCC Pmver (+5V)
VSS Ground
N.C. No Connection
-A-175 -

1 page




THM81000S-10 pdf
THM81 OOOS/L-1 0/12
ELECTRICAL CHARACTERISTIC AND RECOMMENDED AC OPERATING CONDITIOi~S (Continued)
SYMBOL
PARAMETER
Read Command Hold Time referenced
tRRH to RAS
THM81000S/L-IO THM81000S/L-12
UNITS NOTES
MIN. MAX. MIN. MAX.
0 0 ns 10
tWCH
t WCR
Write Conunand Hold Time
Write Command Hold Time referenced
to RAS
20
75
25 ns
90 ns
twp Write Command 'Pulse Width
20 25 ns
tRWL Write Command to RAS Lead Time 25 30 ns
tCWL Write Command to CAS Lead Time 25 30 ns
tos Data Set-Up Time
0 0 ns 11
tOH Oata Hold Time
20 25 ns 11
tOHR
tREF
twcs
Data Hold Time referenced to RAS
Refresh Period
Write Command Set-Up Time
75
8
0
90 ns
8 ms
0 ns 12
tCSR CAS Set-Up Time (CAS before RAS Cycle) 10
10 ns
tCHR CAS Hold Time (CAS before RAS Cycle)
30
30 ns
tRPC RAS to CAS Pre charge Time
0 0 ns
tCPT
tCPN
CAS Precharge Time
(CAS before RAS Counter Test Cycle)
CAS Precharge Time
50
15
60 ns
20 ns
CAPACITANCE (Vcc=5V±10%, f=lMHz, Ta=O 'V 70°C)
SYMBOL
PARAMETER
CII Input Capacitance (AO 'V A9, W, CAS, RAS)
COQ I/O Capacitance (OQO 'V DQ7)
MIN.
MAX.
60
15
UNIT
pF
pF
-A-179-

5 Page





THM81000S-10 arduino
RAS ONLY REFRESH CYCLE
THM81000S/L-l0/12
t3.AS
I
:r-tR--P-c-;
V
Vm
VOH
DOUT
- - - - - - - - - - - - OPEN
EZ2a :Don't Care
Note: HRITE=Don't care, A9=Don't care
-A-185-

11 Page







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