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PDF FGL35N120FTD Data sheet ( Hoja de datos )
| Número de pieza | FGL35N120FTD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
November 2013
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench IGBT technology, Fairchild’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder appli-
cations.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
1
C
G
E
Ratings
1200
25
70
35
105
80
40
368
147
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Max.
0.34
0.9
25
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
70A
35A
4
IC = 18A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
4000
2000
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
400
100
10s
10
100s
1ms
1
10 ms
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10
100
DC
1000 4000
Collector-Emitter Voltage, VCE [V]
Figure 8. Load Current vs. Frequency
150
VCC = 600V
load Current : peak of square wave
120
90
60
30 Duty cycle : 50%
T = 100oC
C
Power Dissipation = 147W
0
1 10
100
Frequency, f [kHz]
1000
Figure 10. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
9
600V
400V
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
20
0
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 35A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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