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PDF FGA25S125P Data sheet ( Hoja de datos )

Número de pieza FGA25S125P
Descripción IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGA25S125P
1250 V, 25 A Shorted-anode IGBT
February 2016
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability . This device is designed
for induction heating and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
G
E
FGA25S125P_SN00337
1250
25
50
25
75
50
25
250
125
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGA25S125P Rev. 1.6
1
www.fairchildsemi.com

1 page




FGA25S125P pdf
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
tr
100
10
1
10
td(on)
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 15. Switching Loss vs.
Gate Resistance
5000
Eon
1000
100
10
Eoff Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 175oC
20 30 40 50 60
Gate Resistance, RG []
70
Figure 17. Turn off Switching
SOA Characteristics
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
td(off)
tf
100 Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
40
10 20
30
40
Collector Current, IC [A]
Figure 16. Switching Loss vs.
Collector Current
10000
50
Eon
1000
100
10
Common Emitter
Eoff VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
100
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
10
1
0.1
0
TC = 25oC
TC = 175oC
123
Forward Voltage, VF [V]
4
©2012 Fairchild Semiconductor Corporation
FGA25S125P Rev. 1.6
5
www.fairchildsemi.com

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