|
|
PDF FGH25N120FTDS Data sheet ( Hoja de datos )
| Número de pieza | FGH25N120FTDS | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGH25N120FTDS (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
November 2013
FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer the optimum performance for hard switching
application such as solar inverter, UPS, welder and PFC appli-
cations.
C
G
CE
TO-247
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
@ TC = 25oC
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C1
1
G
E
Ratings
1200
± 25
50
25
75
50
25
75
313
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.4
1.25
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
50A
4
25A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
4000
2000
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
Gate Resistance
200
100
10s
100s
10 1ms
10 ms
DC
1
30
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 8. Load Current vs. Frequency
Figure 10. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
9
600V
400V
6
3
0
0 40 80 120 160 200
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
tr
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH25N120FTDS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGH25N120FTDS | IGBT | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |