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PDF FGH40T65SPD Data sheet ( Hoja de datos )
| Número de pieza | FGH40T65SPD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGH40T65SPD
650 V, 40 A Field Stop Trench IGBT
October 2013
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• Short Circuit Ruggedness > 5 us @ 25oC
E
C
G
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter UPS, Welder, PFC, Telecom, ESS
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
FGH40T65SPD_F155
650
20
30
80
40
120
40
20
120
267
134
5
-55 to +175
-55 to +175
300
Typ.
-
-
-
Max.
0.56
1.71
40
Unit
V
V
V
A
A
A
A
A
A
W
W
s
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2013 Fairchild Semiconductor Corporation
FGH40T65SPD_F155 Rev. C0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2013 Fairchild Semiconductor Corporation
FGH40T65SPD_F155 Rev. C0
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FGH40T65SPD.PDF ] | |
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