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PDF FGY75N60SMD Data sheet ( Hoja de datos )
| Número de pieza | FGY75N60SMD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A
• High Input Impedance
• Fast Switching : EOFF = 10 uJ/A
• RoHS Compliant
June 2014
General Description
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
Application
• Solar Inverter, UPS, Welder, SMPS, PFC
G
C
E
Power TO247
(TO-247D03)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature.
C
G
E
Ratings
600
± 20
± 30
150
75
225
75
50
225
750
375
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2010 Fairchild Semiconductor Corporation
FGY75N60SMD Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
4
75A
150A
IC = 40A
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
4000
2000
0
1
Coes
Cres
10
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 175oC
td(off)
30
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
4
75A
150A
IC = 40A
0
48
12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC, ICE=75A
12
300V
VCC = 200V
400V
9
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100 tr
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
©2010 Fairchild Semiconductor Corporation
FGY75N60SMD Rev. C2
5
www.fairchildsemi.com
5 Page 
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