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PDF FGH30N60LSD Data sheet ( Hoja de datos )
| Número de pieza | FGH30N60LSD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
November 2013
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
G
CE
TO-247
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IFSM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
Ratings
600
20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
C
C
C
Typ.
--
--
--
Max.
0.26
0.92
40
Unit
C/W
C/W
C/W
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
TC = 125oC
16
12
8
30A 60A
4
IC = 15A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
IC = 30A
12 TC = 25oC
Vcc = 100V
20
9 300V
200V
6
3
0
0 50 100 150 200
Gate Charge, Qg [nC]
Figure 11. Load Current Vs. Frequency
250
80
70
Vcc = 400V
load Current : peak of square wave
60
50
40
30
20
Duty cycle : 50%
10 Tc = 100oC
Powe Dissipation = 192W
0
0.1 1 10
100
Frequency, f [kHz]
1000
Figure 8. Capacitance characteristics
13000
10000
Cies
1000
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
100
50
0
5 10 15 20 25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
300
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
50s
100s
10
1ms
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
DC Operation
0.1
0.1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
100
tr
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
©2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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