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PDF FGP5N60UFD Data sheet ( Hoja de datos )
| Número de pieza | FGP5N60UFD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGP5N60UFD
600V, 5A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.9V @ IC = 5A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFS
October 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS, and PFC applications where low conduc-
tion and switching losses are essential.
C
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
10
5
15
81
32
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
1.55
3.2
62.5
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGP5N60UFD Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
10A
4
5A
IC = 2.5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
600
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
400
200
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 11. SOA Characteristics
30
10 10µs
100µs
1 1ms
10 ms
DC
0.1 Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
5A
4 10A
IC = 2.5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
300V
9 200V
6
3
0
0 5 10 15 20
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
50
10 tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
1
0 10 20 30 40 50
Gate Resistance, RG [Ω]
FGP5N60UFD Rev. A
5
www.fairchildsemi.com
5 Page 
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