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PDF FQH44N10 Data sheet ( Hoja de datos )
| Número de pieza | FQH44N10 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQH44N10
N-Channel QFET® MOSFET
100 V, 48 A, 39 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V,
ID = 24 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
D
G
D
S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FQH44N10_F133
100
48
34
192
25
530
48
18
6.0
180
1.2
-55 to +175
300
FQH44N10_F133
0.83
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FQH44N10 Rev. C1
1
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FQH44N10 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQH44N10.PDF ] | |
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