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PDF FCH041N60E Data sheet ( Hoja de datos )
| Número de pieza | FCH041N60E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FCH041N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 77 A, 41 mΩ
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 36 mΩ
• Ultra Low Gate Charge (Typ. Qg = 285 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
S
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2013 Fairchild Semiconductor Corporation
FCH041N60E Rev. C2
1
FCH041N60E
600
±20
±30
77
48.7
231
2025
15
5.92
100
20
592
4.74
-55 to +150
300
FCH041N60E
0.21
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
0.5
0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.01
Single pulse
0.001
10-5
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.21oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
10-1
t1, Rectangular Pulse Duration [sec]
100
©2013 Fairchild Semiconductor Corporation
FCH041N60E Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCH041N60E.PDF ] | |
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