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PDF M54516P Data sheet ( Hoja de datos )
| Número de pieza | M54516P | |
| Descripción | 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54516P
5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54516P is five-circuit Darlington transistor arrays. The cir-
cuits are made of NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
q Medium breakdown voltage (BVCEO ≥ 25V)
q High-current driving (Ic(max) = 500mA)
q Driving available with PMOS IC output
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
NC 1
IN1→
2
IN2→
3
INPUT IN3→ 4
IN4→
5
IN5→
6
GND 7
14 NC
13
→O1
12
→O2
11 →O3 OUTPUT
10
→O4
9
→O5
8 NC
Package type 14P4(P)
NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54516P has five circuits consisting of NPN Darlington
transistors. These ICs have resistance of 20kΩ between in-
put transistor bases and input pins. The output transistor
emitters are all connected to the GND pin (pin 7).
Collector current is 500mA maximum. Collector-emitter sup-
ply voltage is 25V maximum.
CIRCUIT DIAGRAM
INPUT
20K
OUTPUT
20K
2K
GND
The five circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +25
500
–0.5 ~ +25
1.47
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Jan. 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet M54516P.PDF ] | |
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