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PDF FCPF150N65FL1 Data sheet ( Hoja de datos )
| Número de pieza | FCPF150N65FL1 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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May 2015
FCPF150N65FL1
N-Channel SuperFET® II FRFET® MOSFET
650 V, 24 A, 150 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 133 mΩ
• Ultra Low Gate Charge (Typ. Qg = 72 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom/Server Power Supplies • Solar Inverters
• Computing Power Supplies
• FPD TV Power/Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. SuperFET II FRFET®
MOSFET combines a faster and more rugged intrinsic body
diode performance with fast switching, aimed at achieving bet-
ter reliability and efficiency especially in resonant switching
applications. SuperFET II FRFET is very suitable for the switch-
ing power applications such as server/telecom power, Solar
inverter, FPD TV power, computing power, lighting and indus-
trial power applications.
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF150N65FL1
650
±20
±30
24*
14.9*
72*
663
4.7
2.98
100
50
39
0.31
-55 to +150
300
FCPF150N65FL1
3.2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10
1 0.5
0.2
0.1
0.1 0.05
0.01
0.02
0.01
Single pulse
1E-3
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.2oC/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
t1, Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FCPF150N65FL1 Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCPF150N65FL1.PDF ] | |
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