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PDF FCPF7N60NT Data sheet ( Hoja de datos )
| Número de pieza | FCPF7N60NT | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FCPF7N60NT
N-Channel MOSFET
600 V, 6.8 A, 0.52 Ω
Features
• Typ RDS(on) = 460mΩ
• Ultra Low Gate Charge (typ. Qg = 17.8 nC)
• Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
December 2013
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology em-
ploying a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and pre-
cise process control provides lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 3)
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF7N60NT
600
±30
6.8*
4.3*
20.4
79.4
6.8
0.6
100
4.9
30.5
0.24
-55 to +150
300
FCPF7N60NT
4.1
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Units
oC/W
©2012 Fairchild Semiconductor Corporation
FCPF7N60NT Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
Figure 11. Transient Thermal Response Curve
_ FCPF7N60NT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 4.1oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
t1, Rectangular Pulse Duration [sec]
10 100
©2012 Fairchild Semiconductor Corporation
FCPF7N60NT Rev. C2
5
www.fairchildsemi.com
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