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PDF FDPF17N60NT Data sheet ( Hoja de datos )
| Número de pieza | FDPF17N60NT | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDPF17N60NT
N-Channel UniFETTM II MOSFET
600 V, 17 A, 340 mΩ
Features
• RDS(on) = 290 mΩ (Typ.) @ VGS = 10 V, ID = 8.5 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
December 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel
display (FPD) TV power, ATX and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
1
FDPF17N60NT
600
±30
17*
10.2*
68*
838
17
24.5
10
62.5
0.5
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF17N60NT
2.0
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDPF17N60NT.PDF ] | |
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