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Número de pieza | FDPF5N50T | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDPF5N50T (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDPF5N50T
N-Channel UniFETTM MOSFET
500 V, 5 A, 1.4 Ω
Features
• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supplylications
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF5N50T
500
±30
5*
3*
20*
225
5
8.5
4.5
28
0.22
-55 to +150
300
FDPF5N50T
4.5
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDPF5N50T Rev. C1
1
www.fairchildsemi.com
1 page IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FDPF5N50T Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDPF5N50T.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDPF5N50 | N-Channel MOSFET | Fairchild Semiconductor |
FDPF5N50FT | N-Channel MOSFET | Fairchild Semiconductor |
FDPF5N50NZ | N-Channel MOSFET | Fairchild Semiconductor |
FDPF5N50NZF | MOSFET ( Transistor ) | Fairchild Semiconductor |
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