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PDF FDPF44N25T Data sheet ( Hoja de datos )
| Número de pieza | FDPF44N25T | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDPF44N25T
N-Channel UniFETTM MOSFET
250 V, 44 A, 69 mΩ
Features
• RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A
• Low Gate Charge (Typ. 47 nC)
• Low Crss (Typ. 60 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
August 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220F
D
G
S
TO-220F
LG-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/d
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
1
G
S
FDPF44N25T
FDPF44N25TRDTU
250
44*
26.4*
176*
± 30
2055
44
30.7
4.5
38
0.3
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FDPF44N25T
FDPF44N25TRDTU
3.3
62.5
Unit
°C/W
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDPF44N25T.PDF ] | |
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