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PDF FCP110N65F Data sheet ( Hoja de datos )
| Número de pieza | FCP110N65F | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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December 2014
FCP110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 96 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 98 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
GDS TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCP110N65F Rev. C2
1
S
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCP110N65F
650
±20
±30
35
24
105
809
8
3.57
100
50
357
2.86
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCP110N65F
0.35
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
Single pulse
0.001
10-5
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
10-1
t1, Rectangular Pulse Duration [sec]
1
©2014 Fairchild Semiconductor Corporation
FCP110N65F Rev. C2
5
www.fairchildsemi.com
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCP110N65F.PDF ] | |
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