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PDF FCPF260N60E Data sheet ( Hoja de datos )

Número de pieza FCPF260N60E
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FCPF260N60E Hoja de datos, Descripción, Manual

FCP260N60E / FCPF260N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 15 A, 260 mΩ
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 220 mΩ
• Ultra Low Gate Charge (Typ. Qg = 48 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
GDS
TO-220
GDS TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
FCP260N60E FCPF260N60E
600
±20
±30
15 15*
9.5 9.5*
45 45*
292.5
3.0
1.56
100
20
156 36
1.25 0.29
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP260N60E
0.8
62.5
FCPF260N60E
3.5
62.5
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FCP260N60E / FCPF260N60E Rev. C6
1
www.fairchildsemi.com

1 page




FCPF260N60E pdf
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve for FCP260N60E
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single pulse
1E-3
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 14. Transient Thermal Response Curve for FCPF260N60E
4
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
0.01 Single pulse
1E-3
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FCP260N60E / FCPF260N60E Rev. C6
5
www.fairchildsemi.com

5 Page










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