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PDF FDP030N06B_F102 Data sheet ( Hoja de datos )
| Número de pieza | FDP030N06B_F102 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
• RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
• Low FOM RDS(on) * QG
• Low Reverse-Recovery Charge, Qrr = 78 nC
• Soft Reverse-Recovery Body Diode
• Enables High Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable System
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120A.
FDP030N06B_F102
60
±20
195*
138*
120
780
600
6.0
205
1.37
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP030N06B_F102
0.73
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDP030N06B_F102 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.03
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.73oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, RcteacntagnuglualrarPPuulslseeDDuurratioonn[[sseecc] ]
10-1
1
©2012 Fairchild Semiconductor Corporation
FDP030N06B_F102 Rev. C2
5
www.fairchildsemi.com
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