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PDF FDB52N20 Data sheet ( Hoja de datos )
| Número de pieza | FDB52N20 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDB52N20
N-Channel UniFETTM MOSFET
200 V, 52 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A
• Low Gate Charge (Typ. 49 nC)
• Low Crss (Typ. 66 pF)
• 100% Avalanche Tested
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D2-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (1 in2 Pad of 2-oz Copper), Max.
Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max.
©2008 Fairchild Semiconductor Corporation
FDB52N20 Rev. C2
1
FDB52N20
200
52
33
208
±30
2520
52
35.7
4.5
357
2.86
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FDB52N20
0.35
40
62.5
Unit
°C/W
www.fairchildsemi.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FDB52N20 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDB52N20.PDF ] | |
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