|
|
PDF FDB060AN08A0 Data sheet ( Hoja de datos )
| Número de pieza | FDB060AN08A0 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDB060AN08A0 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
October 2013
FDP060AN08A0 / FDB060AN08A0
N-Channel PowerTrench® MOSFET
75 V, 80 A, 6 mΩ
Features
Applications
• RDS(on) = 4.8 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• QG(tot) = 73 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
Formerly developmental type 82680
D
GDS
TO-220
G
S
D
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 127oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
FDP060AN08A0
FDB060AN08A0
75
±20
80
16
Figure 4
350
255
1.7
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max. TO-220, D2-PAK
Thermal Resistance Junction to Ambient, Max. TO-220, D2-PAK (Note 2)
Thermal Resistance Junction to Ambient, Max. D2-PAK, 1in2 copper pad area
0.58
62
43
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
1
www.fairchildsemi.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
7000
COSS ≅ CDS + CGD
1000
CRSS = CGD
CISS = CGS + CGD
VGS = 0V, f = 1MHz
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
75
Figure 13. Capacitance vs Drain to Source
Voltage
10
VDD = 40V
8
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 16A
20 40 60
Qg, GATE CHARGE (nC)
80
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
5
www.fairchildsemi.com
5 Page 
Mechanical Dimensions
TO-220 3L
Figure 22. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet FDB060AN08A0.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDB060AN08A0 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |