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PDF FDB070AN06A0 Data sheet ( Hoja de datos )
| Número de pieza | FDB070AN06A0 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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October 2013
FDB070AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 7 mΩ
Features
Applications
• RDS(on) = 6.1 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82567
D
D
G
S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 97oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max. (Note 2)
Thermal Resistance Junction to Ambient, Max., 1in2 copper pad area
FDB070AN06A0
60
±20
80
15
Figure 4
190
175
1.17
-55 to 175
0.86
62
43
Unit
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.10
VGS = VDS, ID = 250µA
ID = 250µA
1.0 1.05
0.8 1.00
0.6 0.95
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
CISS = CGS + CGD
10
VDD = 30V
8
1000
CRSS = CGD
COSS ≅ CDS + CGD
VGS = 0V, f = 1MHz
100
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 15A
10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
5
www.fairchildsemi.com
5 Page 
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 22. 2LD, TO263, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
11
www.fairchildsemi.com
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