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PDF FDB024N04AL7 Data sheet ( Hoja de datos )
| Número de pieza | FDB024N04AL7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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June 2014
FDB024N04AL7
N-Channel PowerTrench® MOSFET
40 V, 219 A, 2.4 mΩ
Features
• RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
123
567
4
D2-PAK
(TO-263)
1. Gate
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
D (Pin4, tab)
G
(Pin1)
S (Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FDB024N04AL7
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
40
±20
219*
155*
100
IDM Drain Current
- Pulsed
(Note 1)
876
EAS Single Pulsed Avalanche Energy
(Note 2)
864
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
PD Power Dissipation
(TC = 25oC)
- Derate Above 25oC
214
1.43
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100 A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB024N04AL7
0.7
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDB024N04AL7 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
t1, Rectangular Pulse Duration [sec]
10-1
1
©2010 Fairchild Semiconductor Corporation
FDB024N04AL7 Rev. C1
5
www.fairchildsemi.com
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