|
|
PDF FDD770N15A Data sheet ( Hoja de datos )
| Número de pieza | FDD770N15A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDD770N15A (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
April 2015
FDD770N15A
N-Channel PowerTrench® MOSFET
150 V, 18 A, 77 mΩ
Features
• RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• DC to DC Converters
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
D
G
S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD770N15A
150
±20
±30
18
11.4
36
31.7
6.0
56.8
0.46
-55 to +150
300
FDD770N15A
2.2
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
2.5
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1 Single pulse
0.05
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 2.2oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rte1,cRtaenctgaunlgaurlaPruPlsuelseDDuuraratitoionn[[sseec]]
10-1
1
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDD770N15A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDD770N15A | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |