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PDF FDS6990AS Data sheet ( Hoja de datos )
| Número de pieza | FDS6990AS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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M
FDS6990AS
Dual 30V N-Channel PowerTrench® SyncFET™
March 2010
Features
■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
■ Includes SyncFET Schottky diode
■ Low gate charge (10nC typical)
■ High performance trench technology for extremely low
RDS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
■ Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D1
D1
D2
D2
SO-8
Pin 1
G1
S1
G2
S2
5
Q1
6
7 Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
Device
FDS6990AS
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6990AS Rev. A2
1
www.fairchildsemi.com
1 page  
Typical Characteristics
10
ID =7.5A
8
VDS = 10V
6
15V
4
20V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
12
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135 oC/W
TA = 25oC
100 µs
1ms
10ms
100s
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
Ciss
100 Coss
20
0.1
f = 1 MHz
VGS = 0 V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R θJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * Rθ JA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ – TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDS6990AS Rev. A2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDS6990AS.PDF ] | |
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