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PDF FDMS3604S Data sheet ( Hoja de datos )
| Número de pieza | FDMS3604S | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS3604S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
G1 D1 D1 D1
D1
PHASE
(S1/D2)
G2S2S2 S2
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5
S2 6
S2 7
G2 8
Q2 4 D1
PHASE
3 D1
2 D1
Q1 1 G1
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
33 33
±20 ±20
30 40
60
131a
130
231b
40
404
2.21a
1.01c
100
605
2.51b
1.01d
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.5
501b
1201d
2
°C/W
Device Marking
22CA
N7CC
Device
FDMS3604S
©2011 Fairchild Semiconductor Corporation
FDMS3604S Rev.C5
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
6
4
VDD = 10 V
VDD = 15 V
VDD = 20 V
2000
1000
100
Ciss
Coss
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Crss
f = 1 MHz
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
20
10
TJ = 25 oC
TJ = 100 oC
1
0.01
TJ = 125 oC
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
100us
10
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01 0.1
1
1s
10s
DC
10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
100
80
60
VGS = 4.5 V
40
RθJC = 3.5 oC/W
VGS = 10 V
20
Limited by Package
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1
0.1
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3604S Rev.C5
5
www.fairchildsemi.com
5 Page 
Application Information
1. Switch Node Ringing Suppression
Fairchild’s Power Stage products incorporate a proprietary design* that minimizes the peak overshoot, ringing voltage on the switch
node (PHASE) without the need of any external snubbing components in a buck converter. As shown in the figure 29, the Power Stage
solution rings significantly less than competitor solutions under the same set of test conditions.
Power Stage Device
Competitors solution
Figure 29. Power Stage phase node rising edge, High Side Turn on
*Patent Pending
©2011 Fairchild Semiconductor Corporation
FDMS3604S Rev.C5
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet FDMS3604S.PDF ] | |
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