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PDF FDMS3686S Data sheet ( Hoja de datos )

Número de pieza FDMS3686S
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS3686S Hoja de datos, Descripción, Manual

FDMS3686S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
„ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A
„ Max rDS(on) = 3.8 mΩ at VGS = 4.5 V, ID = 21 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
January 2012
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
G1 D1 D1 D1
D1
PHASE
(S1/D2)
G2S2
S2 S2
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
30 55
54
131a
123
231b
40
404
2.21a
1.01c
100
604
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.5
501b
1201d
2.0
°C/W
Device Marking
22CA
F10CC
Device
FDMS3686S
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com

1 page




FDMS3686S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
6
4
VDD = 10 V
VDD = 15 V
VDD = 20 V
2000
1000
100
Ciss
Coss
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Crss
f = 1 MHz
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
70
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
100us
10
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01 0.1
1
1s
10s
DC
10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
60
50
40
VGS = 4.5 V
30
VGS = 10 V
20
Limited by Package
10 RθJC = 3.5 oC/W
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1
0.1
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
5
www.fairchildsemi.com

5 Page





FDMS3686S arduino
Application Information
1. Switch Node Ringing Suppression
Fairchild’s Power Stage products incorporate a proprietary design* that minimizes the peak overshoot, ringing voltage on the switch
node (PHASE) without the need of any external snubbing components in a buck converter. As shown in the figure 29, the Power Stage
solution rings significantly less than competitor solutions under the same set of test conditions.
Power Stage Device
Competitors solution
Figure 29. Power Stage phase node rising edge, High Side Turn on
*Patent Pending
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
11
www.fairchildsemi.com

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