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PDF FDMS36101L_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDMS36101L_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS36101L_F085
N-Channel Power Trench® MOSFET
100V, 38A, 26mΩ
June 2013
Features
Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A
Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Integrated Starter/alternator
Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
100
±20
38
See Figure4
101
94
0.63
-55 to + 175
1.6
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDMS36101L FDMS36101L_F085
Package
Power 56
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
Notes:
1: Current is limited by bondwire configuration.
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©2013 Fairchild Semiconductor Corporation
FDMS36101L_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
120
ID =20A
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
60 TJ = 175oC
40
20
TJ = 25oC
0
02468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
2.8
PULSE DURATION = 80μs
2.4 DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0.4
-80
ID = 20A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.5
VGS = VDS
1.2 ID = 250μA
0.9
0.6
0.3
0.0
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
Ciss
100
Coss
Crss
10
f = 1MHz
VGS = 0V
1
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 20A
8 VDD = 40V
VDD = 50V
6
VDD = 60V
4
2
0
0 20 40 60 80
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDMS36101L_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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