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PDF FDMS3620S Data sheet ( Hoja de datos )

Número de pieza FDMS3620S
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS3620S Hoja de datos, Descripción, Manual

July 2012
FDMS3620S
PowerTrench® PowerStage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A
„ Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
„ Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A
„ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1 D1 D1 D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2S2
S2 S2
Top Power 56
Bottom
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
TC = 25 °C
TC = 25 °C
TA = 25 °C
(Note 3)
TA = 25 °C
TA = 25 °C
Q1 Q2
25 25
±12 ±12
30 49
76
17.51a
211
381b
70 150
29
2.21a
1.01c
135
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.0
501b
1201d
1.7
°C/W
Device Marking
08OD
06OD
Device
FDMS3620S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS3620S Rev.C1
1
www.fairchildsemi.com

1 page




FDMS3620S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 17.5 A
8
6
4
VDD = 10 V
VDD = 15 V
VDD = 13 V
2
0
0 4 8 12 16 20 24 28
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
30
10 TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1
1
tAV, TIME IN AVALANCHE (ms)
10
50
Figure9. UnclampedInductive
Switching Capability
2000
1000
100
Ciss
Coss
f = 1 MHz
Crss
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
80
70
60
VGS = 10 V
50
VGS = 4.5 V
40
30
20
Limited by Package
10 RθJC = 3.0 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
100 μs
10
1 ms
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
10 ms
100 ms
1s
10s
DC
100
Figure 11. Forward Bias Safe
Operating Area
1000
100
SINGLE PULSE
RθJA = 125 oC/W
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS3620S Rev.C1
5
www.fairchildsemi.com

5 Page





FDMS3620S arduino
0.10 C
(2X)
8
5.10
4.90
PKG
CL
5
PKG CL
PIN # 1
INDICATOR
14
TOP VIEW
A
B
6.25
5.90
0.10 C
(2X)
0.63
2.15
4.16
2.13
0.63
4.00
CL
8 76
12 3
0.59
3.18
5.10
1.27 TYP
0.65 TYP
5
2.52
1.60
KEEP OUT AREA
0.00 CL
1.21
2.31
4 3.15
SEE
DETAIL A
RECOMMENDED LAND PATTERN
FOR SAWN / PUNCHED TYPE
SIDE VIEW
0.45
0.25
(6X)
0.65
0.38
1
3.16
2.80
23
0.10
0.05
0.70
0.36
CAB
C
4 1.34
1.12
4.08
3.70
0.66±.05
2.25
2.05
0.65 8
0.38
0.44
0.24
76
1.27
3.81
1.02
5 0.82
0.61
0.31
(8X)
BOTTOM VIEW
0.10 C
8X
0.08 C
1.10
0.90
0.35
0.15
0.05
0.00
C
SEATING
PLANE
(SCALE: 2X)

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