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Número de pieza | FDMC0310AS | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC0310AS (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDMC0310AS
N-Channel PowerTrench® SyncFETTM
30 V, 21 A, 4.4 mΩ
January 2015
Features
General Description
Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
Advanced package and silicon combination for low rDS(on) and
high efficiency
SyncFETTM Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
The FDMC0310AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S SG
S
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( t Transient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalance Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
33
±20
21
19
100
66
36
2.4
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC0310AS
Device
FDMC0310AS
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC0310AS Rev.C9
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDMC0310AS Rev.C9
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDMC0310AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC0310AS | MOSFET ( Transistor ) | Fairchild Semiconductor |
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