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PDF FDMC0310AS Data sheet ( Hoja de datos )

Número de pieza FDMC0310AS
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC0310AS Hoja de datos, Descripción, Manual

FDMC0310AS
N-Channel PowerTrench® SyncFETTM
30 V, 21 A, 4.4 mΩ
January 2015
Features
General Description
„ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
„ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ SyncFETTM Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMC0310AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top Bottom
Pin 1
S SG
S
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( t Transient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalance Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
33
±20
21
19
100
66
36
2.4
-55 to +150
Units
V
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC0310AS
Device
FDMC0310AS
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC0310AS Rev.C9
1
www.fairchildsemi.com

1 page




FDMC0310AS pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDMC0310AS Rev.C9
5
www.fairchildsemi.com

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