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PDF FDMS8560S Data sheet ( Hoja de datos )
| Número de pieza | FDMS8560S | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS8560S
November 2014
N-Channel PowerTrench® SyncFETTM
25 V, 70 A, 1.8 mΩ
Features
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
70
30
150
79
65
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
1.9
50
°C/W
Device Marking
05OD
Device
FDMS8560S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
1E-3
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
1E-4
10-4
10-3
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMS8560S.PDF ] | |
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