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PDF FDP10N60ZU Data sheet ( Hoja de datos )
| Número de pieza | FDP10N60ZU | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
April 2009
UniFETTM
tm
Features
• RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Low gate charge ( Typ. 31nC)
• Low Crss ( Typ. 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
S
FDP10N60ZU FDPF10N60ZUT
600
±30
9 9*
5.4 5.4*
(Note 1)
36
36*
(Note 2)
100
(Note 1)
9
(Note 1)
18
(Note 3)
20
180 42
1.45 0.3
-55 to +150
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
FDP10N60ZU FDPF10N60ZUT Units
0.7 3.0
0.5 - oC/W
62.5 62.5
©2009 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N60ZU/FDPF10N60ZUT Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDP10N60ZU.PDF ] | |
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