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PDF FDB082N15A Data sheet ( Hoja de datos )
| Número de pieza | FDB082N15A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2015
FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
Features
• RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 64.5 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC (f > 1 Hz)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Sbove 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB082N15A
150
±20
±30
117
83
468
542
6
294
1.96
-55 to +175
300
FDB082N15A
0.51
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05 PDM
0.02
0.01 0.01
Single pulse
*Notes:
t1
t2
1. ZθJC(t) = 0.51oC/W Max.
2. Duty Factor, D= t1/t2
1E-3
3. TJM - TC = PDM * ZθJC(t)
10-5 10-4 10-3 10-2 10-1 100
tR1,eRcetactnagnugulalarrPPuullssee Duurraattiioonn[s[sece]c]
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDB082N15A.PDF ] | |
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