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Número de pieza | FDD850N10L | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD850N10L (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDD850N10L
N-Channel PowerTrench® MOSFET
100 V, 15.7 A, 75 mΩ
November 2013
Features
• RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
S
D
D-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD850N10L
100
±20
15.7
11.1
63
41
6.0
50
0.33
-55 to +175
300
FDD850N10L
3.0
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
1
www.fairchildsemi.com
1 page IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDD850N10L.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD850N10L | MOSFET ( Transistor ) | Fairchild Semiconductor |
FDD850N10LD | N-Channel PowerTrench MOSFET + Diode | Fairchild Semiconductor |
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