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Número de pieza | FDY1002PZ | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FDY1002PZ
Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET
October 2008
–20 V, –0.83 A, 0.5 Ω
Features
General Description
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A
Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A
Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A
Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A
HBM ESD protection level = 1400 V (Note 3)
RoHS Compliant
This Dual P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(on)@VGS = –1.5 V.
Application
Li-Ion Battery Pack
6
5
4
1
2
3
SC89-6
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–0.83
–1.0
0.625
0.446
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
200
280
°C/W
Device Marking
G
Device
FDY1002PZ
Package
SC89-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDY1002PZ Rev.B1
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.02
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 280 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
FDY1002PZ Rev.B1
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDY1002PZ.PDF ] |
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