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PDF FDS9934C Data sheet ( Hoja de datos )
| Número de pieza | FDS9934C | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2006
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V.
• Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V
RDS(ON) = 90 mΩ @ VGS = –2.5 V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS9934C
Device
FDS9934C
Reel Size
13’’
Ratings
Q1 Q2
20 –20
±10 ±12
6.5 –5
20 –30
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS9934C Rev D(W)
1 page  
Typical Characteristics: Q1 (N-Channel)
5
ID = 3 A
4
3
VDS = 5V
15V
10V
2
1
0
01234567
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
8
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
f = 1 MHz
VGS = 0 V
600
400
200
Crss
0
0
Coss
Ciss
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
100
FDS9934C Rev D(W)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDS9934C.PDF ] | |
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