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Número de pieza | FDS8935 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS8935 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! FDS8935
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
High performance trench technology for extremely low rDS(on)
This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
Applications
Load Switch
Synchronous Rectifier
D2
D1
D1
D2
Pin 1
G2
S2
G1
S1
D2 55
D2 66
D1 77
D1 88
Q2
Q1
44 G2
33 S2
22 G1
11 S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-80
±20
-2.1
-10
37
3.1
1.6
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8935
Device
FDS8935
Package
SO-8
(Note 1)
(Note 1a)
40
78
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDS8935.PDF ] |
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