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PDF FDS86240 Data sheet ( Hoja de datos )
| Número de pieza | FDS86240 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDS86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
High Performance Trench Technology for Extremely Low
rDS(on)
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using ON
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
7.5
199
220
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS86240
Device
FDS86240
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.2
1
Publication Order Number:
FDS86240/D
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
1
10-1
10-2
10-3
10-4
10-5
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
102
103
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