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PDF FGD3040G2_F085 Data sheet ( Hoja de datos )

Número de pieza FGD3040G2_F085
Descripción N-Channel Ignition IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FGD3040G2_F085 Hoja de datos, Descripción, Manual

May 2014
FGB3040G2_F085 / FGD3040G2_F085
FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
JEDEC TO-262AA
EC
G
GATE
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
1
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
300
170
41
25.6
±10
150
1
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
www.fairchildsemi.com

1 page




FGD3040G2_F085 pdf
Typical Performance Curves (Continued)
30
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
20
VGE = 4.0V
VGE = 3.7V
10
TJ = 175oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
45
40
35
30
25
20
15
10
5
0
25
VGE = 5.0V
50 75 100 125 150
TC, CASE TEMPERATURE(oC)
175
Figure 9. DC Collector Current vs. Case
Temperature
2.0
VCE = VGE
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Threshold Voltage vs. Junction
Temperature
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VCE = 5V
20
10 TJ = 175oC
TJ = 25oC
TJ = -40oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
10
ICE = 10A, TJ = 25oC
8
VCE = 6V
6
VCE = 12V
4
2
0 0 10 20 30 40 50 60
Qg, GATE CHARGE(nC)
Figure 10. Gate Charge
10000
1000
VECS = 24V
100
10
VCES = 300V
1
0.1
-50
VCES = 250V
-25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Leakage Current vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
5
www.fairchildsemi.com

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